700V, 3.8 mOhm, SP6C, Full Bridge mSiC™ MOSFET Module

•    SiC Power MOSFET•    Kelvin source for easy drive•    Low stray inductance•    High efficiency converter•    Outstanding performance at high frequency operation•    Stable temperature behavior•    Direct mounting to heatsink (isolated package)•    Low junction to case thermal resistance•    RoH Full Bridge\nVDSS (V): 700\nRDSon (mR) typ: 3.8\nCurrent (A) Tc=80C: 369\nSilicon Type: SiC MOSFET\nPackage Type: SP6C;

Microchip

微芯科技

Full Bridge SiC Power Module

Features The following are the key features of MSCSM70HM038CAG device: • SiC Power MOSFET – Low RDS(on) – High temperature performance • SiC Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature Independent switching behavior – Positive temperature coefficient on VF

文件：1.34791 Mbytes 页数：16 Pages

Microchip

微芯科技

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：PM-MOSFET-SIC-SBD-SP6C

Microchip

微芯科技

QFP128

MSTAR

上传：瀚佳科技(深圳)有限公司

QFP

MSTAR/晨星半导体

上传：深圳市鹏兴电子有限公司