700V, 1.7 mOhm, SP6C, Dual Common Source mSiC™ MOSFET Module

•SiC Power MOSFET -Low RDS(on)-High temperature performance •Kelvin source for easy drive •Low stray inductance •High efficiency converter •Outstanding performance at high frequency operation •Stable temperature behavior •Direct mounting to heatsink (isolated package) •Low junction to case thermal r • Configuration: Dual Common Source\n• VDSS (V): 700\n• RDSon (mR) typ: 1.7\n• Current (A) Tc=80C: 812\n• Silicon Type: SiC MOSFET\n• Package Type: SP6C;

Microchip

微芯科技

QFP128

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上传：瀚佳科技(深圳)有限公司

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QFP-144

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