1700V, 11.7 mOhm, SP6C, Full Bridge mSiC™ MOSFET Module

•    SiC Power MOSFET•    Kelvin source for easy drive•    Low stray inductance•    High efficiency converter•    Outstanding performance at high frequency operation•    Stable temperature behavior•    Direct mounting to heatsink (isolated package)•    Low junction to case thermal resistance•    RoH Full Bridge\nVDSS (V): 1700\nRDSon (mR) typ: 11.7\nCurrent (A) Tc=80C: 142\nSilicon type: SiC MOSFET\nPackage: SP6C;

Microchip

微芯科技

Full Bridge SiC Power Module

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Microchip

微芯科技

QFP128

MSTAR

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QFP

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