RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：108.33 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC80196 is Designed for Class A Linear Applications up to 2.0 GHz. FEATURES: • Class A Operation • PG = 7.0 dB at 1.0 W/2.0 GHz • Omnigold™ Metalization System

文件：18.79 Kbytes 页数：1 Pages

ASI

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC80196 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：108.9 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ■ EMITTER BALLASTED ■ CLASS A LINEAR OPERA

文件：123.47 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Trans RF BJT NPN 20V 0.5A 4-Pin Case SO-11

NJS

新泽西半导体

Trans RF BJT NPN 20V 0.7A 4-Pin Case SO-11

NJS

新泽西半导体