Dual Silicon Carbide Schottky Barrier Diodes

文件：1.71866 Mbytes 页数：7 Pages

MICROSEMI

美高森美

SiC Schottky Barrier Diodes

FEATURES ·Low forward voltage ·Low leakage current ·Avalanche-energy rated ·RoHS compliant ·Isolated voltage to 2500 V APPLICATIONS ·Power factor correction (PFC) · Anti-parallel diode ·Motor controllers · Freewheeling diode · Snubber/clamp diode

文件：555.71 Kbytes 页数：3 Pages

ISC

无锡固电

Dual Silicon Carbide Schottky Barrier Diodes

文件：1.71866 Mbytes 页数：7 Pages

MICROSEMI

美高森美

SiC Schottky Barrier Diodes

ROHS

Microchip

微芯科技

1200V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

MSC2X31SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over • No reverse recovery\n• Low forward voltage\n• Low leakage current\n• Avalanche-energy rated\n• RoHS compliant\n• Isolated voltage to 2500V;

Microchip

微芯科技

SiC Schottky Barrier Diodes

ROHS

Microchip

微芯科技

包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：SIC SBD 700 V 30 A DUAL PARALLEL

MICROCHIP

微芯科技

包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：SIC SBD 1200 V 30 A DUAL PARALLE

MICROCHIP

微芯科技

包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：SIC SBD 1700 V 30 A DUAL PARALLE

MICROCHIP

微芯科技