首页 >MSC>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MSC017SMA120J

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件:575.15 Kbytes 页数:3 Pages

ISC

无锡固电

MSC020SMB120B

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件:1.07219 Mbytes 页数:13 Pages

MICROCHIP

微芯科技

MSC020SMB120B4N

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件:1.0557 Mbytes 页数:12 Pages

MICROCHIP

微芯科技

MSC020SMB120B4NVAO

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件:1.0557 Mbytes 页数:12 Pages

MICROCHIP

微芯科技

MSC020SMB120BVAO

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • Creepage distan

文件:1.07219 Mbytes 页数:13 Pages

MICROCHIP

微芯科技

MSC020SMB120SD

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • RoHS compliant

文件:1.88747 Mbytes 页数:13 Pages

MICROCHIP

微芯科技

MSC020SMB120SDTSLASHR

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • RoHS compliant

文件:1.88747 Mbytes 页数:13 Pages

MICROCHIP

微芯科技

MSC020SMB120SDTSLASHRM

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • RoHS compliant

文件:1.88747 Mbytes 页数:13 Pages

MICROCHIP

微芯科技

MSC020SMB120SDTSLASHRMVAO

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • RoHS compliant

文件:1.88747 Mbytes 页数:13 Pages

MICROCHIP

微芯科技

MSC020SMB120SDTSLASHRVAO

1200V, 20 mΩ N-Channel mSiC™ MOSFET

Features • Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness (100% UIS production tested) • RoHS compliant

文件:1.88747 Mbytes 页数:13 Pages

MICROCHIP

微芯科技

技术参数

  • package_carrier:

    Tube

  • package_name:

    TO-247 (B) 2-lead

  • Reverse Breakdown Voltage (min):

    0

  • Reverse Breakdown Voltage (typ):

    0

  • Reverse Breakdown Voltage (max):

    700

  • Forward Current (A) (min):

    0

  • Forward Current (A) (typ):

    0

  • Forward Current (A) (max):

    10

  • Forward Voltage (V) (min):

    0

  • Forward Voltage (V) (typ):

    1.5

  • Forward Voltage (V) (max):

    1.8

  • Capacitance (pF) (min):

    0

  • Capacitance (pF) (typ):

    49

  • Capacitance (pF) (max):

    0

  • Thermal Resistance (min):

    0

  • Thermal Resistance (typ):

    1.3

  • Thermal Resistance (max):

    1.8

  • Junction to Case (℃/W) (min):

    -55

  • Junction to Case (℃/W) (typ):

    0

  • Junction to Case (℃/W) (max):

    175

供应商型号品牌批号封装库存备注价格
TI
20+
MSSOP
2960
诚信交易大量库存现货
询价
TI/德州仪器
22+
UNKNOWN
12245
现货,原厂原装假一罚十!
询价
Mini-Circuits
2023+
A03
100
专业销售MINI电子元件,常年备有大量库存
询价
TI
25+
QFP64
10000
全新原装现货
询价
TI
25+
VQFN-36
3000
全新原装、诚信经营、公司现货销售!
询价
TEXAS INSTRUMENTS
23+
NA
9600
全新原装正品!一手货源价格优势!
询价
MAG.LAYERS
16+
NA
8800
原装现货,货真价优
询价
Microchip
24+
原封装
44520
郑重承诺只做原装进口现货
询价
TI/德州仪器
1818+ROHS
QFN
6000
原封原包,一手货源,长期有现货,正规进口
询价
MINI
24+
SMD其他电子元
17
一级代理全新原装现货
询价
更多MSC供应商 更新时间2026-9-27 14:09:00