Low rDS(on) trench technology

文件：467.03 Kbytes 页数：6 Pages

BWTECH

HV MOSFETs

Bruckewell

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM90N10Q uses advanced trench technology and design to provide excellent RDS(ON) with

文件：707.51 Kbytes 页数：7 Pages

ADV

爱德微

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 105A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：337.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Super Trench II Power MOSFET

文件：577.72 Kbytes 页数：5 Pages

HMSEMI

华之美半导体