MSB606M

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes

FEATURES *Lowleakage *Lowforwardvoltage *MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260'C

MWP-606

SWITCHINGPOWERSUPPLYISO-9001CERTIFIEDMANUFACTURER

MWP-606A

104WTripleOutputSwitchingPowerSupply

MWP-606A

SWITCHINGPOWERSUPPLYISO-9001CERTIFIEDMANUFACTURER

NCP606

LDORegulator-LowIGND,CMOSwith/withoutEnableandwithEnhanced500mA

TheNCP605/NCP606provideinexcessof500mAofoutput currentatfixedvoltageoptionsoranadjustableoutputvoltagefrom 5.0Vdownto1.25V.Thesedevicesaredesignedforspace constrainedandportablebatterypoweredapplicationsandoffer additionalfeaturessuchashighPSRR,lowno

NDB606A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDB606AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDB606B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDB606BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDP606A

N-ChannelEnhancementModePowerFleidEffectTransistor