RLBGB20N60

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

RLFGB20N60CT

N-CHANNELIGBT

FEATURES Lowgatecharge TrenchFSTechnology, saturationvoltage:VCE(sat),typ=1.6V,IC=20AandTC=25°C APPLICATIONS Generalpurposeinverters UPS

RLGB20N60CT

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

RLPGB20N60CT

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UP

RLTPGB20N60CT

N-CHANNELIGBT

APPLICATIONS Generalpurposeinverters UPS FEATURES Lowgatecharge TrenchFSTechnology, Saturationvoltage:VCE(sat),typ=1.85VIC=20AandTC=25°C

RM20N60LD

N-ChannelEnhancementModePowerMOSFET

RM20N60LDV

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

RMD20N60DF

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

RMD20N60DFV

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

SD20N60

MetalOxideSemiconductorFieldEffectTransistor