N沟道 MOSFET

MOSWAY

谋仕微

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density

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NCEPOWER

新洁能

N-Channel 30-V (D-S) MOSFET

文件：1.00247 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Optoisolator Schmitt Trigger Output

Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is designed for applications requiring electrical isolation, fast response time, noise i

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NTE