Trans RF BJT NPN 65V 5.5A 4-Pin

NJS

新泽西半导体

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

文件：87 Kbytes 页数：3 Pages

ADPOW

Package：M115；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 65V 1.15GHZ M115

MICROSEMI

美高森美

AXIAL LEAD DIODES

STABISTORS Also Tight Tolerance(AXIAL LEAD DIODES)

文件：82.11 Kbytes 页数：2 Pages

MICROSEMI

美高森美

MECHANICAL CHARACTERISTICS

DESCRIPTION/FEATURES □ HermeticallySealed Glass Packages (DO-35) □ High Reverse Breakdown and Low Leakage □ Excellent Low VoltageRegulation □ Controlled Stored Charge □ Planar Passivated Die Elements APPLICATION These axial lead diodes represent configurations of one to four* p-n junctio

文件：104.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Complementary Transistors High Speed Switch

High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.

文件：22.67 Kbytes 页数：2 Pages

NTE