Low Voltage MOSFET

CITC

竹懋科技

3.3 V Zero Delay Clock Buffer

文件：161.05 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2308X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：641.77 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage • Fast Switching Speed • Wide ASO

文件：22.99 Kbytes 页数：2 Pages

NTE