Power Film Resistors

[CADDOCK ELECTRONICS, INC.] Power Film Resistor Family with Wide Resistance Range and +275°C Maximum Temperature With power ratings to 22 Watts and voltage ratings as high as 6,000 volts in an axial-lead resistor with values to 30 Megohms, the Type MS Power Film Resistors deliver the performanc

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RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

DESCRIPTION: The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. Features • 350 WATTS @ 10µSEC PULSE WIDTH, 10 DUTY CYCLE • 300 WATTS @ 250µSEC PULSE WIDTH 10 DUT

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ADPOW

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. KEY FEATURES ◾ 350 Watts @ 10µSec Pulse Width, 10 Duty Cycle ◾ 300 Watts @ 250µSec

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Microsemi

美高森美

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20-40 VOLTS

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WEITRON

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-40V)

Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20-40 VOLTS

文件：234.3 Kbytes 页数：3 Pages

MOSPEC

统懋

Power Film Resistors

[CADDOCK ELECTRONICS, INC.] Power Film Resistor Family with Wide Resistance Range and +275°C Maximum Temperature With power ratings to 22 Watts and voltage ratings as high as 6,000 volts in an axial-lead resistor with values to 30 Megohms, the Type MS Power Film Resistors deliver the performanc

文件：233.32 Kbytes 页数：2 Pages

etc2List of Unclassifed Manufacturers

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RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. Features • 500

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ADPOW

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2201 is a silicon NPN, Class C microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. Features • 1025-1150 MHz • GOLD METALLIZATI

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ADPOW

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

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CIT

CIT SWITCH

SPECIFICATIONS Switch Function DPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

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CIT