RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

DESCRIPTION: The MS1506 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1506 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. Features • 160 MHz • 13.6 VOLTS • POUT = 40 WATTS • GP = 9.0 d

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ADPOW

RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

DESCRIPTION: The MS1508 is a 28 V Class C gold metallized epitaxial silicon NPN planar transistor designed for UHF military and commercial equipment. The MS1508 is an internally matched, broadband device optimized for operation within the 225 – 400 MHz frequency range. This device utlizies diffus

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ADPOW

RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

DESCRIPTION: The MS1509 is a 28 V gold metallized, Class C epitaxial silicon NPN planar transistor designed for UHF military and commercial equipment. The MS1508 is an internally matched, broadband device optimized for operation within the 100 – 500 MHz frequency range. This device utilizes diffu

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Power Film Resistors

[CADDOCK ELECTRONICS, INC.] Power Film Resistor Family with Wide Resistance Range and +275°C Maximum Temperature With power ratings to 22 Watts and voltage ratings as high as 6,000 volts in an axial-lead resistor with values to 30 Megohms, the Type MS Power Film Resistors deliver the performanc

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ETCList of Unclassifed Manufacturers

未分类制造商

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450 – 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR at rated operating conditions. KEY FEATURES ◾

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Microsemi

美高森美

RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

DESCRIPTION: The MS1511 is a 28 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emitter resistors to achieve VSWR of 10:1 under operating conditions, and is internally input matched to optimize power gain and efficiency ov

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RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION: The MS1512 is a silicon NPN bipolar transistor designed for UHF linear applications, specifically TV Bands IV and V. The MS1512 is characterized for high linearity, Class A operation. Device ruggedness and reliability are maximized with emitter ballasting and gold metallization. Fea

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Interface RF Connector with Switch

Designed for end user applications requiring redirection of transmission from internal built-in antenna to the external antenna. Small size, lightweight and high reliability makes it ideal for use in 2.4 GHz band wireless LAN applications

文件：179.53 Kbytes 页数：7 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

Interface RF Connector with Switch, built-in interlock, DC to 3GHz

Designed for end user applications requiring redirection of transmission from internal built-in antenna to the external antenna. Small size, lightweight and high reliability makes it ideal for use in 2.4 GHz band wireless LAN applications

文件：168.85 Kbytes 页数：6 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

Interface RF Connector with Switch, built-in interlock, DC to 3GHz

Designed for end user applications requiring redirection of transmission from internal built-in antenna to the external antenna. Small size, lightweight and high reliability makes it ideal for use in 2.4 GHz band wireless LAN applications

文件：168.85 Kbytes 页数：6 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社