Pressure regulator

文件：93.93 Kbytes 页数：2 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

Water trap

文件：75.83 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

N-Channel Enhancement Mode Power MOSFET

文件：891.18 Kbytes 页数：6 Pages

BWTECH

N-Channel Enhancement Mode Power MOSFET

文件：389.62 Kbytes 页数：4 Pages

BWTECH

Branching module

文件：85.7 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

滑动开关

APEM

埃斐

丝印：MS1200032M2；Package：TO-247-4L；1200V 32mΩ Silicon Carbide Power MOSFET

High blocking voltage with low on-resistance High switching speed with low capacitance Very fast and robust intrinsic body diode with low reverse recovery Very low switching losses Excellent avalanche ruggedness RoHS compliant

文件：1.0979 Mbytes 页数：17 Pages

SANAN

三安光电

丝印：MS125；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：994.93 Kbytes 页数：14 Pages

TI

德州仪器

丝印：MS125；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：994.93 Kbytes 页数：14 Pages

TI

德州仪器

丝印：MS125；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：994.93 Kbytes 页数：14 Pages

TI

德州仪器