包装：盒 类别：传感器，变送器 磁性传感器 - 位置，接近，速度（模块） 描述：SEN PROX MAG RECT CO

Carlo Gavazzi Inc.

丝印：MS1200032M2；Package：TO-247-4L；1200V 32mΩ Silicon Carbide Power MOSFET

High blocking voltage with low on-resistance High switching speed with low capacitance Very fast and robust intrinsic body diode with low reverse recovery Very low switching losses Excellent avalanche ruggedness RoHS compliant

文件：1.0979 Mbytes 页数：17 Pages

SANAN

三安光电

丝印：MS1701000K；Package：TO-247-3L；1700V 1000mΩ Silicon Carbide Power MOSFET

High blocking voltage with low on resistance High switching speed with low capacitance Very fast and r obust intrinsic body diode with low reverse recovery Very low switching losses Excellent avalanche ruggedness RoHS compliant

文件：1.71335 Mbytes 页数：16 Pages

SANAN

三安光电

丝印：MS125；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：994.93 Kbytes 页数：14 Pages

TI

德州仪器

丝印：MS125；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：994.93 Kbytes 页数：14 Pages

TI

德州仪器

丝印：MS125；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：994.93 Kbytes 页数：14 Pages

TI

德州仪器

丝印：MS126；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub 1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：992.9 Kbytes 页数：14 Pages

TI

德州仪器

丝印：MS126；Package：VQFN；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub 1-V Operable · Max tpd of 2.1 ns at 1.8 V · Low Power Consumption, 10-mA Max ICC · ±8-mA Output Drive at 1.8 V · Latch-Up Perf

文件：992.9 Kbytes 页数：14 Pages

TI

德州仪器

丝印：MS14；Package：VQFN；HEX SCHMITT-TRIGGER INVERTER

1FEATURES • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation • Ioff Supports Partial-Power-Down Mode Operation • Sub-1-V Operable • Max tpd of 2 ns at 1.8 V • Low Power Consumption, 10-mA Max ICC • ±8-mA Output Drive at 1.8 V • Latch-Up Perfo

文件：987.06 Kbytes 页数：13 Pages

TI

德州仪器

丝印：MS14；Package：VQFN；HEX SCHMITT-TRIGGER INVERTER

1FEATURES • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation • Ioff Supports Partial-Power-Down Mode Operation • Sub-1-V Operable • Max tpd of 2 ns at 1.8 V • Low Power Consumption, 10-mA Max ICC • ±8-mA Output Drive at 1.8 V • Latch-Up Perfo

文件：987.06 Kbytes 页数：13 Pages

TI

德州仪器