RF Power Field Effect Transistors

文件：802.1 Kbytes 页数：16 Pages

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RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs

文件：744.54 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：802.1 Kbytes 页数：16 Pages

恩XP

RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs

文件：744.54 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：802.1 Kbytes 页数：16 Pages

恩XP

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1995 MHz, 37 W Avg., 28 V

The MRF8P20165WHR3 and MRF8P20165WHSR3 are designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz. • Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz.\n• Designed for Wideband Applications that Require 65 MHz Signal Bandwidth\n• Production Tested in a Symmetrical Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large;

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