N-Channel Enhancement-Mode Lateral MOSFET

文件：282.86 Kbytes 页数：13 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：282.86 Kbytes 页数：13 Pages

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：405.36 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：240.45 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：240.45 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：240.45 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：405.36 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

N-Channel Enhancement-Mode Lateral MOSFET

文件：282.86 Kbytes 页数：13 Pages

恩XP

1510 MHz，23 W平均值，28 V单载波W-CDMA射频功率LDMOS

The MRF7S15100HR3 and MRF7S15100HSR3 are designed for CDMA base station applications with frequencies from 1470 to 1510 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications. • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 23 Watts Avg., f = 1507.5 MHz, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 19.5 dBDrain Efficiency: 32%Device ;

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