NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz • Omnigold™ Metalization System

文件：17.7 Kbytes 页数：1 Pages

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Microwave Pulse Power Silicon NPN Transistor

文件：188.78 Kbytes 页数：6 Pages

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Microwave Pulse Power Silicon NPN Transistor

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Microwave Pulse Power Silicon NPN Transistor

文件：624.71 Kbytes 页数：7 Pages

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Bipolar

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ·Guaranteed Performance @ 1090 MHz - Output Power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)\n·Silicon Nitride Passivated\n·Hermetically Sealed Package\n·100%Tested for Load Mismatch at all Phases Angels with 10:1 VSWR\n·Characterized Using Mode-S Pulse Format\n·Internal Input and OutputMatch;

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MICROWAVE POWER TRANSISTOR

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Package：355E-01；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 65V 355E-01

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