Partial Resonance Power Supply ICModule

Feature ■ Partial resonance Realization of high efficiency and low noise by partial resonance operation ■ 900V high-voltage high-speed IGBT is used (MR40XX series) 100V, 200V, W / W input can support high power supply. ■ Stand-by response (default mode) It has a boot mode switching

文件：1.0636 Mbytes 页数：43 Pages

SHINDENGEN

Quasi-Resonant Power Supply ICs　THD

Shindengen

新电元

TO-5 Photocells Hermetic Package

文件：24.68 Kbytes 页数：1 Pages

SILONEX

TO-5 Hermetic Photocell

文件：332.35 Kbytes 页数：1 Pages

ADVANCEDPHOTONIX

20 V, 5 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5520X. FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 5 A • Higher efficiency leading to less heat generation. APPLICATIONS • Med

文件：112.95 Kbytes 页数：13 Pages

PHI

PHI