包装：散装 类别：标签，标志，护栏，标识 标签，贴纸，贴标 - 预印 描述：LABEL ID/RATINGS 1\

TE Connectivity Raychem Cable Protection

包装：散装 类别：标签，标志，护栏，标识 标签，贴纸，贴标 - 预印 描述：LABEL ID/RATINGS 1\

TE Connectivity Raychem Cable Protection

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60 (Typ) • Cost Effective PowerMac

文件：99.07 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impr

文件：171.23 Kbytes 页数：5 Pages

MICROSEMI

美高森美

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. FEATURES: • 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 (Typ)

文件：68.18 Kbytes 页数：3 Pages

ASI