MP9N150

N-CHANNEL MOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical10pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

MP9N150-GE-B

N-CHANNEL MOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical10pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

MP9N150-GE-BR

Marking：MP9N150；Package：TO-247；N-CHANNEL MOSFET

APPLICATIONS Highefficiencyswitch modepowersupplies Electroniclampballasts basedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical10pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

STW9N150

N-channel1500V-2.2廓-8A-TO-247VeryhighvoltagePowerMESH??PowerMOSFET

STW9N150

N-channel1500V-1.8Ω-8A-TO-247veryhighvoltagePowerMESH™PowerMOSFET

Features ■100%avalanchetested ■Avalancheruggedness ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Highspeedswitching ■Verylowon-resistance Application ■Switchingapplications Description UsingthewellconsolidatedhighvoltageMESH OVERLAY™process,STMi

STW9N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

W9N150V

N-channel1500V-2.2廓-8A-TO-247VeryhighvoltagePowerMESH??PowerMOSFET