TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type

文件：276.21 Kbytes 页数：11 Pages

TOSHIBA

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High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications

文件：213.51 Kbytes 页数：11 Pages

TOSHIBA

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Power MOSFET module

Feature：4V-gate drive available\nPolarity：N-ch×3, P-ch×3\nRoHS Compatible Product(s) (#)：Available Drain Current (Nch ID 5 A \nDrain Current (Pch ID -5 A \nCollector Power Dissipation (all devices operation)　@Ta=25°C PDT 4.4 W \nDrain-source Voltage (Nch VDSS 60 V \nDrain-source Voltage (Pch VDSS -60 V ;

Toshiba

东芝

High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications

文件：213.51 Kbytes 页数：11 Pages

TOSHIBA

东芝