TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin) • High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25°C) • High collector current: IC (DC) = −5 A (max) • High DC current ga

文件：145.91 Kbytes 页数：6 Pages

TOSHIBA

东芝

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

文件：162.06 Kbytes 页数：6 Pages

TOSHIBA

东芝

Darlington power transistor 4 in 1

Feature：Built-in diode for absorbing flyback voltage\nPolarity：PNP×2 + PNP×2\nRoHS Compatible Product(s) (#)：Available Collector Current IC -5 A \nCollector Power Dissipation (all devices operation) @Ta=25°C PT 4.4 W \nCollector-emitter voltage VCEO -100 V ;

Toshiba

东芝

12mm x 4.5mm SMD

DESCRIPTION The MP crystal provides an ideal source of low frequency clock signals (from 3.5MHz) in a low-profile SMD package. The part is electrically and mechanically compatible with traditional industry SMD packages and may be used as a drop-in replacement. • Low frequencies from 3.5MHz to 70

文件：115.82 Kbytes 页数：1 Pages

EUROQUARTZ

石英公司

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

文件：162.06 Kbytes 页数：6 Pages

TOSHIBA

东芝