Tunnel Diodes

M-pulse

抑制电源电磁干扰用电容器

介质：聚丙烯膜 \n\n电极：金属真空蒸发层 \n\n外壳：阻燃PBT塑壳（UL94 V-0）\n\n封装：阻燃环氧树脂（UL94 V-0） \n\n引脚：镀锡铜包钢线 体积小，有良好自愈性，抗湿性强，耐过电压性能优良。;

SR-CAP

塑镕

RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS

DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resis

文件：132.51 Kbytes 页数：4 Pages

ADPOW

Timers

文件：171.91 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Timers Direct Replacement for NE555 Timers Adjustable Duty Cycle

文件：223.15 Kbytes 页数：11 Pages

ONSEMI

安森美半导体