首页 >MN5117S>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NTE5111AthruNTE5166AZenerDiode,5Watt5Tolerance Features: ●ZenerVoltage:3.3Vto200V ●HighSurgeCurrentCapability | NTE NTE Electronics | NTE | ||
??0V,16m,??1A,SingleP?묬hannel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
3V,1.8GHzTO2.8GHzLINEARPOWERAMPLIFIER ProductDescription TheRF5117isalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransi | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
3V,1.8GHzTO2.8GHzLINEARPOWERAMPLIFIER | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
3V,1.8GHzTO2.8GHzLINEARPOWERAMPLIFIER | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
3V,1.8GHzTO2.8GHzLINEARPOWERAMPLIFIER | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
3V,1.8GHzTO2.8GHzLINEARPOWERAMPLIFIER ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
3V,1.8GHzTO2.8GHzLINEARPOWERAMPLIFIER ProductDescription TheRF5117Cisalinear,medium-power,high-efficiencyamplifierICdesignedspecificallyforbattery-poweredWLANapplicationssuchasPCcards,miniPCI,andcompactflashapplications.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTrans | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD |
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