首页 >MMT3055L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TMOSIVN-ChannelEnhancement-ModePowerFieldEffectTransistorDPAKforSurfaceorInsertionMount TMOSPOWERFET8AMPERESRDS(on)=0.15OHM60VOLTS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSIVPowerFieldEffectTransistor(N-ChannelEnhancement-ModeSiliconGate) | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features 12A,60V.RDS(ON)=0.15Ω@VGS=10V Lowgatecharge. Fastswitchingspe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50an | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerMOSFET12Amps,60Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelEnhancementModePowerMOSFET Features VDS=60V,ID=50A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
M-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50and60voltTMOSdevices.JustaswithourTMOS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerMOSFET12Amps,60Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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