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1M200Z

1.0WattGlassPassivatedJunctionSiliconZenerDiodes

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

1M200Z

1W,10V-200VGlassPassivatedJunctionSiliconZenerDiodes

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

1M200Z

1.0WattsGlassPassivatedJunctionSiliconZenerDiode

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

1M200Z

GlassPassivatedJunctionSiliconZenerDiode

Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

1M200Z

GlassPassivatedJunctionSiliconZenerDiode

Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

1M200Z

GlassPassivatedJunctionSiliconZenerDiode

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

1M200Z

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory

TRSYS

Transys Electronics

NH1M200

NHFuseLinks

Littelfuselittelfuse

力特力特公司

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