isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.62 Kbytes 页数：2 Pages

ISC

无锡固电

800V N-Ch MOSFET

MagnaChip

美格纳

800V 1.2Ω N-channel MOSFET

 Description MMF80R1K2QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.33225 Mbytes 页数：10 Pages

MGCHIP

800V 1.2Ω N-channel MOSFET

 Description MMF80R1K2QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.33225 Mbytes 页数：10 Pages

MGCHIP

N-Channel Super Junction Power MOSFET

文件：601.28 Kbytes 页数：8 Pages

NCEPOWER

新洁能