800V 0.29Ω N-channel MOSFET

 Description MMF80R290R is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user-friendly devices give an advantage of low EMI to

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MGCHIP

丝印：80R290R；Package：TO-220F；800V 0.29Ω N-channel MOSFET

 Description MMF80R290R is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user-friendly devices give an advantage of low EMI to

文件：710.47 Kbytes 页数：10 Pages

MGCHIP

800V SJ MOSFETs

MagnaChip

美格纳

800V 0.29(ohm) N-channel MOSFET

文件：1.38957 Mbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

800V 0.29(ohm) N-channel MOSFET

文件：1.38957 Mbytes 页数：10 Pages

MGCHIP