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MMDT2907V

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVceo>-60V •IC=-600mACollectorCurrent •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMDT2222V •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighRe

DIODESDiodes Incorporated

美台半导体

MMPQ2907

PNPGeneralPurposeAmplifier

Description ThePN2907A,MMBT2907A,andPZT2907Aare60V-PNPbipolartransistorsdesignedforuseasageneral-purposeamplifierorswitchinapplicationsthatrequireupto500mA.Offeredinanultra-smallsurface-mountpackage(SOT-223),thePZT2907Aisidealforspace-constrainedsystems.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMPQ2907A

PNPMulti-ChipGeneralPurposeAmplifier

PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforuseasageneralpurposeamplifierandswitchrequiring collectorcurrentsto500mA.SourcedfromProcess63.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMPQ2907A

PNPMulti-ChipGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMPQ2907A

SURFACEMOUNTPNPSILICONQUADTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORMMPQ2907A,consistingoffourtransistorsandavailableintheSOIC-16surfacemountpackage,isdesignedforgeneralpurposeamplifierandswitchingapplications.

CentralCentral Semiconductor Corp

美国中央半导体

MMST2907

PNPMediumPowerTransistor(Switching)

Features 1)BVCEO

ROHMRohm

罗姆罗姆半导体集团

MMST2907

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>-60V •IC=-600mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMST2222A •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

DIODESDiodes Incorporated

美台半导体

MMST2907

Plastic-EncapsulateTransistors

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

MMST2907A

PNPMediumPowerTransistor(Switching)

Features 1)BVCEO

ROHMRohm

罗姆罗姆半导体集团

MMST2907A

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

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