丝印：FR；Package：SOT-23；PNP Silicon Epitaxial Planar Transistor

FEATURES The transistor is subdivided into three groups Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：485.87 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：FR；Package：TO-236；PNP Transistor

文件：957.19 Kbytes 页数：4 Pages

PJSEMI

平晶半导体

PNP Transistor

三极管,PNP,VCBO -60V,VCEO -50V,VEBO -6A,IC -0.15A, PD 200mW,HFE 180~390,FT Typ.140MHZ,Package SOT-23

TANiSemi

台奕

PNP Transistor

文件：957.19 Kbytes 页数：4 Pages

PJSEMI

平晶半导体

PNP Silicon Epitaxial Planar Transistor

FEATURES The transistor is subdivided into three groups Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：485.87 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

PNP Silicon Epitaxial Planar Transistor

FEATURES The transistor is subdivided into three groups Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：485.87 Kbytes 页数：3 Pages

GWSEMI

唯圣电子