N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching

文件：141.75 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching

文件：215.84 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

场效应晶体管

ST

意法半导体

MOS场效应

JSMICRO

杰盛微

场效应晶体管

CBI

创基电子

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

文件：443.29 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

N-Channel Enhancement Mode FET

Features Two transistors in one package Fast switching times Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Logic level converter, Drivers Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01

文件：169.05 Kbytes 页数：2 Pages

Diotec

德欧泰克

N-Channel Enhancement Mode FET with protected Gate

Features ESD protected Gate Fast switching times Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Logic level converter, Drivers Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical

文件：109.52 Kbytes 页数：2 Pages

Diotec

德欧泰克

N-Channel Enhancement Mode Field Effect Transistor

Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV

文件：201.6 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

N-Channel Enhancement Mode Field Effect Transistor

Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV • AEC-Q101 Qualified and PPAP Capable • Halogen and Antimony Free(HAF), RoHS compliant

文件：245.98 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体