N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching

文件：215.84 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching

文件：141.75 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

场效应晶体管

ST

意法半导体

MOS场效应

JSMICRO

杰盛微

场效应晶体管

CBI

创基电子

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

文件：443.29 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

N-Channel Enhancement Mode Power MOSFET

Features ⚫ Fast switching ⚫ Low gate charge and RDS(on) ⚫ Low reverse transfer capacitances ⚫ ESD protected(HBM) up to 2KV ⚫ VDS= 60V,ID= 0.5A RDS(on)

文件：1.27064 Mbytes 页数：5 Pages

HUIXIN

慧芯电子

N-Channel Enhancement Mode MOSFET

Applications • Portable appliances • Load switch appliances

文件：1.2284 Mbytes 页数：6 Pages

HUIXIN

慧芯电子

N-Channel Enhancement Mode MOSFET

Features • Very fast switching • Halogen and Antimony Free(HAF), RoHS compliant • Typical ESD Protection HBM Class 2 Application • Portable appliances • Battery management

文件：649.2 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

N-Channel Enhancement Mode FET

Features Two transistors in one package Fast switching times Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Logic level converter, Drivers Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01

文件：169.05 Kbytes 页数：2 Pages

DIOTEC

德欧泰克