首页 >MMBT3904LT1T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GeneralPurposeTransistor GeneralPurposeTransistor •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
GeneralPurposeTransistor GeneralPurposeTransistor •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=5dB(MAX) @VCE=5.0V,f=10Hzto15.7kHz,IC=100uA,RS=1.0kΩ •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,high-gainamplifiers andlinearbroadbandamplifiers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
GeneralPurposeTransistor(NPNSilicon) GeneralPurposeTransistor NPNSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
GeneralPurposeTransistor(NPNSilicon) GeneralPurposeTransistor NPNSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistor GeneralPurposeTransistor NPNSilicon | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
Transistors(NPN) FEATURES ■Powerdissipation,PCM:0.2W(Tamb=25℃) ■Collectorcurrent,ICM:0.2A ■Collector-basevoltage,V(BR)CBO:60V ■Operatingandstoragejunctiontemperaturerange: TJ,Tstg:-55℃to+150℃ ■SOT-23plastic-encapsulatepackage DeviceMarking:AM1 | SSC Silicon Standard Corp. | SSC | ||
NPNSILICON GeneralPurposeTransistor NPNSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
GeneralPurposeTransistor(NPNSilicon) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheMMBT3904LT1isdesignedforgeneralpurposeswitchingamplifierapplications. | TGS Tiger Electronic Co.,Ltd | TGS |
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