丝印：7A；Package：SOT23；NPN switching transistor

FEATURES • Collector current capability IC = 200 mA • Collector-emitter voltage VCEO = 40 V. APPLICATIONS • General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906.

文件：355.27 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：1AM；Package：SOT-23；Plastic-Encapsulate Transistors

FEATURES Complementary to MMBT3906

文件：721.04 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

NPN Transistors

Features ● Complementary to MMBT3906 ● Marking:1AM

文件：499.24 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction

文件：232.36 Kbytes 页数：2 Pages

HOTTECH

合科泰

丝印：1AM；Package：SOT-23；Plastic-Encapsulate Transistors

SOT-23 Plastic-Encapsulate Transistors Applications: For general amplification and switching, it is complementary to MMBT3906.

文件：435.86 Kbytes 页数：2 Pages

SHENZHENSLS

三联盛

丝印：1E；Package：SOT-23；NPN Transistor

Features ● For Switching and AF Amplifer Applications. ● Silicon Epitaxial Chip.

文件：884.49 Kbytes 页数：4 Pages

PJSEMI

平晶半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● Complementary to MMBT3906

文件：2.16643 Mbytes 页数：4 Pages

HDSEMI

海德半导体

NPN General Purpose Amplifier

Features • Collector current capability IC = -200 mA • Collector-emitter voltage VCEO = -40 V • RoHS compliant package Application • General switching and amplification

文件：489.81 Kbytes 页数：6 Pages

BWTECH

NPN Transistors

Features Small Package Complementary to MMBT3906T

文件：1.83803 Mbytes 页数：4 Pages

UMW

友台半导体

丝印：1AM；Package：SOT-23；NPN General Purpose Amplifier

Features ●Epoxy meets UL-94 V-0 flammability rating ●Halogen free available upon request by adding suffix ”HF” ●Moisure Sensitivity Level 1 ●Marking:1AM

文件：1.31998 Mbytes 页数：5 Pages

SAMYANG

三阳电子