GENERAL PURPOSE TRANSISTORS

Features - Epitaxial planar die construction - Device is designed as a general purpose amplifier and switching. - Useful dynamic range exceeds to 600mA ​​​​​​​ As a switch and to 100MHz as an amplifier.

文件：137.89 Kbytes 页数：4 Pages

COMCHIP

典琦

General Purpose Transistor

Comchip

典琦

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.6A SOT23-3

COMCHIP

典琦

PNP Epitaxial Silicon Transistor

VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 350 mW

文件：58.19 Kbytes 页数：4 Pages

Fairchild

仙童半导体

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：86.25 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

General Purpose Transistors PNP Silicon

Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：122.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体