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MMBD101LT1

SchottkyBarrierDiodes

DesignedprimarilyforUHFmixerapplicationsbutsuitablealsoforuseindetectorandultra-fastswitchingcircuits.Suppliedinaninexpensiveplasticpackageforlow-cost,high-volumeconsumerrequirements.AlsoavailableinSurfaceMountpackage. •LowNoiseFigure—6.0dBTyp@1.0GHz •VeryLow

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

MMBD101LT1

SchottkyBarrierDiodes

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBD101LT1

SILICONSCHOTTKYBARRIERDIODES

DesignedprimarilyforUHFmixerapplicationsbutsuitablealsoforuseindetectorandultra−fastswitchingcircuits.Suppliedinaninexpensiveplasticpackageforlow−cost,high−volumeconsumerrequirements.AlsoavailableinSurfaceMountpackage. Features •LowNoiseFigure−6.0dBTyp@1

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBD101LT1G

SchottkyBarrierDiodes

DesignedprimarilyforUHFmixerapplicationsbutsuitablealsoforuseindetectorandultra−fastswitchingcircuits.Suppliedinaninexpensiveplasticpackageforlow−cost,high−volumeconsumerrequirements.AlsoavailableinSurfaceMountpackage. Features •LowNoiseFigure−6.0dBTyp@1

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBD101LT1G

SchottkyBarrierDiodes

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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