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AD6426

EnhancedGSMProcessor

GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6426XB

EnhancedGSMProcessor

GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6426XST

EnhancedGSMProcessor

GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AN6426NK

Hands-freeSpeechNetworkIC

■Features •Incorporatesallthefunctionsrequiredofahands-free telephone. •Incorporatesallthefunctionsrequiredofahandset. •ComplieswithACandDCimpedancerequirements. •Providesawidedynamicrange. •Anoisedetectingcircuitpreventsinadvertenttransmission. •Operati

PanasonicPanasonic Corporation

松下松下电器

AON6426

DFN5X6PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AON6426L

DFN5X6PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AON6426L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON6426LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=24A(VGS=

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

CEA6426

N-Channel0-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.6A,RDS(ON)=90mW@VGS=10V. RDS(ON)=110mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供应商型号品牌批号封装库存备注价格
FAIRCHIL
2020+
SOP8
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ML
SMD
45500
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHIL
23+
SOP
155
询价
MICROLINEAR
2022
SOP
5280
原厂原装正品,价格超越代理
询价
ML
22+
SOP24
14000
原装现货热卖中,提供一站式真芯服务
询价
5000
公司存货
询价
MICROLINEAR
23+
SMD
11923
询价
ML
2016+
SOP24
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
ML
00+
SOP24
1465
全新原装进口自己库存优势
询价
更多ML6426CSS供应商 更新时间2024-6-16 14:08:00