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NTE5830

StudMountStandardRecoverySiliconRectifiers,3Amp

Description: TheNTE5830throughNTE5849aresiliconrectifiersinaD04typepackagedesignedforuseinpowersuppliesandotherapplicationshavingneedofadevicewiththefollowingfeatures: ●HighCurrenttoSmallSize ●HighSurgeCurrentCapability ●LowForwardVoltageDrop

NTE

NTE Electronics

NTMFS5830NL

PowerMOSFET40V,172A,2.3m

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVD5830NL

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVD5830NL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=123A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.7mΩ(Max)@VGS=10V DESCRIPTION ·PowerSupplies ·InductiveLoads ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NVMFS5830NL

PowerMOSFET40V,2.3m,185A,SingleN.Channel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFS5830NL

40V,2.3m,185A,SingleN?묬hannel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SM5830P

High-speed,8-bitVariable-lengthShiftRegister

NPC

Nippon Precision Circuits Inc

SOM-DB5830

DevelopmentBoardforCOMExpress®Type6/10Pin-OutModules

Features ƒPICMGCOMR3.0Type6&Type10pinoutcompatible ƒCOMExpressRBasic/Compact/Minimodule ƒHDMI/DP,LVDS/eDP,VGA ƒI/OExpansion: A2:PCIeGen4slot,USB3.2Gen2 A1:PCIeGen3slot,USB3.2Gen2 ƒVisibleDebugUtility:BIOSPort80andPowerState

ADVANTECHAdvantech Co., Ltd.

研华科技研华科技(中国)有限公司

SZ5830

5.0WATT6.8-270VOLTSZENERDIODES

SSDI

Solid States Devices, Inc

TD5830A

3ALowDropoutRegulatorwithEnable

TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德美国泰德半导体有限公司

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