PJ4800

30VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@8A=20mΩ •RDS(ON),VGS@5.0V,IDS@6A=31mΩ •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConverters •FullyCharacterizedAvalancheVoltageandCurrent •Pbfreeproduct:99Snabovec

PT4800

ThinTypePhototransistor

■Features 1.Thintypepackage(Thickness:1.5mm) 2.Visiblelightcut-offtype:PT4800F/PT4810F/PT4850F 3.Singlephototransistoroutput:PT4800/PT4800F/PT4850F Darlingtonphototransistoroutput:PT4810/PT4810F 4.Thintype ■Applications 1.VCRs 2.Floppydiskdrives

PT4800F

ThinTypePhototransistor

■Features 1.Thintypepackage(Thickness:1.5mm) 2.Visiblelightcut-offtype:PT4800F/PT4810F/PT4850F 3.Singlephototransistoroutput:PT4800/PT4800F/PT4850F Darlingtonphototransistoroutput:PT4810/PT4810F 4.Thintype ■Applications 1.VCRs 2.Floppydiskdrives

QPF4800

Wi-FiFrontEndModule

QPF4800SB

Wi-FiFrontEndModule

QPF4800SQ

Wi-FiFrontEndModule

QPF4800SR

Wi-FiFrontEndModule

SDM4800

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

SDM4800

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SurfaceMountPackage. ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable.

SI4800

N-channelenhancementmodefield-effecttransistor

N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOStechnology. 1.Lowgatecharge 2.Surfacemountedpackage 3.Lowon-stateresistance 4.Fastswitching.