IGBT Modules H-Bridge

IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Features • NPT IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controll

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IXYS

艾赛斯

Full Bridge IGBT Modules

·Vces: 600V and 1200V. Ic(25): 45A - 165A\n·NPT or NPT³ IGBT with low Vce(sat), low switching losses, high RBSOA and short circuit ruggedness\n·short tail current for optimized performance in resonant circuits\n·Hiperfast diodes with soft recovery\n·Package with insulated copper base plate (2500V r;

Littelfuse

力特

Package：E2；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MODULE 600V 72A 225W E2

IXYS

艾赛斯

Full Bridge IGBT Modules

·Vces: 600V and 1200V. Ic(25): 45A - 165A\n·NPT or NPT³ IGBT with low Vce(sat), low switching losses, high RBSOA and short circuit ruggedness\n·short tail current for optimized performance in resonant circuits\n·Hiperfast diodes with soft recovery\n·Package with insulated copper base plate (2500V r;

Littelfuse

力特

Package：E2；包装：散装 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MODULE 600V 72A 225W E2

IXYS

艾赛斯