IC CLK GENERATOR LOW EMI 8-SOIC

Renesas

瑞萨

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 时钟发生器，PLL，频率合成器 描述：IC CLK GENERATOR LOW EMI 8-SOIC

Renesas Electronics America Inc

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

文件：173.04 Kbytes 页数：5 Pages

Microsemi

美高森美

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

文件：125.09 Kbytes 页数：5 Pages

ADPOW

NPN SILICON RF MICROWAVE TRANSISTOR

DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package

文件：27.13 Kbytes 页数：1 Pages

ASI