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MMFT3055E

MEDIUMPOWERTMOSFET1.7AMP60VOLTS

N–ChannelEnhancementMode SiliconGateTMOSE–FET™SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to–sourcediodewithafastrecoverytime

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMFT3055E

N-ChannelTMOSE-FETPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMFT3055EL

MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMFT3055V

TMOSPOWERFET1.7AMPERES60VOLTS

TMOSV™SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMFT3055V

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMFT3055VL

TMOSPOWERFET1.5AMPERES60VOLT

TMOSV™SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMFT3055VL

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMJD3055

SiliconNPNepitaxialplanerTransistors

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MTD3055E

TMOSIVN-ChannelEnhancement-ModePowerFieldEffectTransistorDPAKforSurfaceorInsertionMount

TMOSPOWERFET8AMPERESRDS(on)=0.15OHM60VOLTS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTD3055EL

TMOSIVPowerFieldEffectTransistor(N-ChannelEnhancement-ModeSiliconGate)

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

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