| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET12A,60VP-ChannelDPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET12A,60VP-ChannelDPAK | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
产品属性
- 产品编号：
MJF2955G
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
管件
- 晶体管类型：
PNP
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2.5V @ 3.3A，10A
- 电流 - 集电极截止（最大值）：
1µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
20 @ 4A，4V
- 频率 - 跃迁：
2MHz
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商器件封装：
TO-220FP
- 描述：
TRANS PNP 90V 10A TO220FP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-220F |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ON |
24+ |
TO-2203LEADFULLPA |
8866 |
询价 | |||
ON |
1728+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ONS |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON Semiconductor |
2010+ |
N/A |
358 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
ON |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ON/安森美 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 |
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