POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

文件：135.59 Kbytes 页数：4 Pages

MOSPEC

统懋

16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS

. . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage — NPN PNP VCEO(sus) = 140 Vdc — MJE4342

文件：197.53 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Respectively complement to type MJE4350/4351/4352/4353 • DC current gain hFE=8(Min)@IC=16A APPLICATIONS • For use in high power audio amplifier and switching regulator circuits

文件：134.83 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-3PN package • Respectively complement to type MJE4350/4351/4352/4353 • DC current gain hFE=8(Min)@IC=16A APPLICATIONS • For use in high power audio amplifier and switching regulator circuits

文件：290.05 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Respectively complement to type MJE4350/4351/4352/4353 • DC current gain hFE=8(Min)@IC=16A APPLICATIONS • For use in high power audio amplifier and switching regulator circuits

文件：139.44 Kbytes 页数：3 Pages

SAVANTIC

POWER TRANSISTORS COMPLEMENTARY SILICON

High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features • High Collector−Emitter Sustaining Voltage − NPN PNP VCEO(sus) = 160

文件：142.66 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High-Voltage - High Power Transistors

High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features • High Collector−Emitter Sustaining Voltage − NPN PNP VCEO(sus) = 160

文件：138.54 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High?뭋oltage  High Power Transistors

文件：147.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件：141.02 Kbytes 页数：3 Pages

SAVANTIC

16 A，160 V，NPN 双极功率晶体管

The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353\n• High DC Current Gain - @ IC = 8.0 AdchFE = 35 (Typ)\n• Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc\n• These devices are available in Pb-free package(s). Specificat;

ONSEMI

安森美半导体