High Voltage General Purpose Applications

High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350

文件：37.15 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Plastic Medium?뭁ower NPN Silicon Transistor

Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • Pb−Free Package is Available

文件：73.17 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN EPITAXIAL SILICON POWER TRANSISTOR

For use in High Voltage General Purpose Applications

文件：244.16 Kbytes 页数：3 Pages

CDIL

COMPLEMENTARY SILICON PLASTIC POWER TRANSITORS

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE340, MJE350 type are Complementary Silicon Power Transistors designed for power output stages in consumer product applications.

文件：52.78 Kbytes 页数：1 Pages

CENTRAL

Medium Power NPN Transistor

Feature: • NPN Plastic Medium Power Silicon Transistor • Useful for High Voltage General Purpose Applications Description Transistor, NPN, TO-126

文件：178.01 Kbytes 页数：2 Pages

MULTICOMP

易络盟

Medium Power NPN Transistors

Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications.

文件：236.49 Kbytes 页数：3 Pages

MULTICOMP

易络盟

0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability

文件：117.45 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Complement to the PNP MJE350 APPLICATIONS ·Designed for high voltage

文件：144.23 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment

文件：98.81 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) • DC Current Gain- : hFE = 30(Min) @ IC= 50mA • Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA • Complement to the PNP MJE350 • Minimum Lot-to-Lot variations for robust device performance and rel

文件：223.1 Kbytes 页数：2 Pages

TGS