MJE181数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.

特性 Features

• Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182
• DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc
• Current-Gain - Bandwidth Product -fT = 50 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB
• Pb-Free Packages are Available

简介

MJE181属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJE181晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。