MJE18004中文资料5.0 A, 1000 V NPN Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The MJE/MJF18004G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts.

特性 Features

• Improved Efficiency Due to Low Base Drive Requirements:- High and Flat DC Current Gain h FE- Fast Switching- No Coil Required in Base Circuit for Turn-Off (No Current Tail)
• Full Characterization at 125°C
• Motorola \"6 SIGMA\" Philosophy Provides Tight and Reproducible Parametric Distributions
• Two Package Choices: Standard TO-220 or isolated TO-220
• MJF18004, Case 221D, is UL Registered at 3500 VRMS: File #E69369
• Pb-Free Packages are Available

简介

MJE18004属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJE18004晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。