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MJE18002D2数据手册恩XP中文资料规格书
MJE18002D2规格书详情
描述 Description
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation NetworkThe MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
The main advantages brought by these new transistors are:
• Improved Global Efficiency Due to the Low Base Drive Requirements
• DC Current Gain Typically Centered at 45
• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
• Easy to Use Thanks to the Integrated Collector/Emitter Diode
The MOTOROLA \"Six Sigma\" philosophy provides tight and reproductible parameter distribution.
* High speed High gain Bipolar transistor
** Power Factor Control
技术参数
- 型号:
MJE18002D2
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
918 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
询价 | ||
ON |
2016+ |
TO220 |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
ON |
03+00+ |
TO-220 |
1100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
22+ |
TO220 |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 | ||
ON(安森美) |
2511 |
8790 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
询价 | ||
MOTOROLA/摩托罗拉 |
22+ |
N/A |
13900 |
现货,原厂原装假一罚十! |
询价 | ||
ON |
22+ |
SOT-263 |
3000 |
原装正品,支持实单 |
询价 | ||
ON |
TO-220 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |