MJD210-1数据手册恩XP中文资料规格书

描述 Description

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTSMJD200 NPN
MJD210 PNPNPN/PNP Silicon DPAK For Surface Mount Applications. . . designed for low voltage, low–power, high–gain audio amplifier applications.
• Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc
• High DC Current Gain — hFE= 70 (Min) @ IC= 500 mAdc
                                                              = 45 (Min) @ IC= 2 Adc
                                                              = 10 (Min) @ IC= 5 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Low Collector–Emitter Saturation Voltage —VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc
                                                                      = 0.75 Vdc (Max) @ IC= 2.0 Adc
• HighCurrent–Gain — Bandwidth Product — fT= 65 MHz (Min) @ IC= 100 mAdc
• Annular Construction for Low Leakage — ICBO= 100 nAdc @ Rated VCB